Appeal No. 2003-2107
Application No. 09/429,283
14. A method of manufacturing a semiconductor device in
which there are first and second types of transistors formed on a
single semiconductor substrate, comprising the steps of:
(a) selectively forming a field oxide film on a main surface
of said semiconductor substrate to thereby define first and
second regions in which said first and said second types of
transistors are formed;
(b) forming an oxide film on said first and said second
active regions; and
(c) forming a control electrode of a polysilicon layer on
said first and said second regions,
wherein said step (c) includes the steps of:
(c-1) introducing an impurity of the same conductivity as a
source/drain layer into said polysilicon layer within said first
active region at a relatively low dose n1; and
(c-2) introducing said impurity into said polysilicon layer
within said second active region at a relatively high dose n2
while introducing nitrogen into a lower portion of said
polysilicon layer within said second active region at a dose n3.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
Choi 5,780,330 Jul. 14, 1998
(filed Jun. 28, 1996)
Gardner et al. (Garner) 6,004,849 Dec. 21, 1999
(filed Aug. 15, 1997)
Chishima JP 4-157766 May 29, 1992
(Japanese Kokai Patent)
A. I. Chou et al. (Chou), "The Effects of Nitrogen Implant into
Gate Electrode on the Characteristics of Dual-Gate MOSFETs with
Ultra-thin Oxide and Oxynitrides," IEEE 174-77 (August 4, 1977)
S.M. Sze (Sze), VLSI Technology 493-94 (2d ed., McGraw-Hill 1988)
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