Appeal No. 2003-2107
Application No. 09/429,283
Takashi Kuroi et al. (Kuroi), "The Impact of Nitrogen
Implantation into Highly Doped Polysilicon Gates for Highly
Reliable and High-Performance Sub-Quarter-Micron Dual-Gate
Complementary Metal Oxide Semiconductor," 34 Japanese Journal of
Appl. Phys., Pt. 1, No. 2B, 771-75 (February 1995)
Claims 14 through 27 stand rejected under 35 U.S.C. § 103 as
being unpatentable over Chishima in view of Gardner, Choi, Chou,
Kuroi, and Sze.
Reference is made to the Examiner's Answer (Paper No. 21,
mailed October 2, 2002) for the examiner's complete reasoning in
support of the rejections, and to appellants' Brief (Paper
No. 18, filed May 20, 2002) and Reply Brief (Paper No. 22, filed
December 2, 2002) for the appellants' arguments thereagainst.
OPINION
We have carefully considered the claims, the applied prior
art references, and the respective positions articulated by
appellants and the examiner. As a consequence of our review, we
will reverse the obviousness rejection of claims 14 through 27.
Independent claim 14 recites introducing an impurity into
each of the two transistors, but with different dosages. In
independent claim 16, the control electrode for each of the two
transistors includes nitrogen, and then extra nitrogen is added
to the control electrode of only one of the transistors.
Independent claim 19 recites nitrogen of a first concentration
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