Appeal No. 2003-2107
Application No. 09/429,283
for the control electrode of one transistor and nitrogen of a
second concentration different from the first concentration for
the control electrode of the second transistor. All of the
claims thus require that at least some impurity (nitrogen for
claims 16 and 19) is introduced into both transistors and that
the amount for one is different from the amount for the other.
The examiner relies upon Chishima, Gardner, Choi, Chou,
Kuroi, and Sze in rejecting all of the claims. Specifically, the
examiner states (Answer, pages 3-5) that Chishima discloses
nitrogen in the p-channel transistor but not in the n-channel
transistor, Choi discloses implanting nitrogen in p-type
transistors, and Gardner discloses that the threshold voltage
depends on the concentration of dopants in the gate of a MOSFET
and "the formation of MOSFETs having different concentrations of
dopant on the same wafer thus establishing dopant concentration
in the gate of a MOSFET to be a result effective variable." The
examiner further states that Chou discloses "the effects of
different concentrations of nitrogen in the gate of a MOSFET with
respect to B, which is a p-type dopant and As, which is an n-type
dopant, thus establishing nitrogen concentration in the gate of a
MOSFET to be a result effective variable for both p-type and
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