Appeal No. 2004-0550
Application No. 09/802,201
conjunction with an n-type source/drain (Brief, pages 6-7). This
argument is not persuasive for reasons stated by the examiner
(Answer, pages 13-14), namely that Draper is only relied upon for
the teaching of forming a supply decoupling capacitor by
connecting the gate to a positive supply rail and the
source/drain regions to a ground potential.
Appellants argue that n-type and p-type materials behave
differently and these types of materials cannot be directly
substituted to obtain the present invention (Brief, page 7).
This argument is not persuasive since, as noted by the examiner
(Answer, page 14), the p+ type polysilicon gate of Lee is used in
place of the polysilicon gate of Rajkanan, where Rajkanan is
silent as to the doping of the gate material. Therefore,
contrary to appellants’ argument, a p+ type material is not
substituted for an n-type material.
Appellants argue that there is no motivation to combine the
source/drain regions of Rajkanan with the p-type polysilicon gate
for a transistor from Lee since transistors and capacitors
perform entirely different functions and operate in an entirely
different manner (Brief, page 7). This argument is not well
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