Appeal 2006-3124
Application 10/251,179
Para. [0011]. Thus, the invention is directed to the adjustment of the gap
between a substrate holder and a substrate to reduce polymer deposition on
exposed surfaces of the substrate holder and bottom surfaces of the substrate.
Br. 15-16.
Claims 1 and 8 are illustrative:
1. A plasma processing apparatus comprising:
a processing chamber;
a power source which energizes process gas in an interior of the
processing chamber into a plasma state for processing a substrate;
a substrate support which supports a substrate within the interior of the
processing chamber, the substrate support having an upper surface;
an upper ring surrounding the substrate support, the upper ring having a
portion extending under a substrate when the substrate is located on the
substrate support; and
a coupling ring surrounding the substrate support, the coupling ring
having a first ring rotatable with respect to a second ring to adjust height of
the coupling ring and adjust a gap between the upper ring and the substrate.
8. An adjustment mechanism for adjusting a gap between a substrate
and a surrounding ring in a plasma processing apparatus, the adjustment
mechanism comprising:
a first ring having at least three projections extending from the first ring
in a direction parallel to an axis of the first ring; and
a second ring having at least three sets of a plurality of steps arranged to
receive each of the at least three projections, wherein a total thickness of the
first and second ring rings is adjustable by rotation of the first ring with
respect to the second ring.
3
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