Appeals 2006-2874 and 2006-2747
Applications 08/544,212 and 09/287,664
Patent 5,401,305
1 A. K. Hochberg and D. L. O'Meara in J.
2 Electrochem Soc. 136(6) 1843 (1989) reported
3 enhanced deposition of silicon oxide films at
4 570°C. by CVD [chemical vapor deposition] at
5 low pressure when trimethylphosphite was added
6 to TEOS [tetraethyl orthosilicate—col. 2, line 40].
7 As with plasma-enhanced CVD, however, low-
8 pressure CVD is not readily utilized for the
9 continuous commercial application of silicon-
10 oxide films on a moving glass sheet to produce a
11 coated-glass article due at least in part to the cost
12 and complexity of the device used for deposition at
13 low pressure.
14
15 What one skilled in the art learns from Appellants' discussion of
16 Hochberg is that enhanced deposition of silicon oxide films at 570°C can be
17 achieved if trimethylphosphite is added to TEOS.
18 E. Analysis of obviousness
19
20 Claim interpretation
21 The language of claim 28 (Appeal 2006-2747) is somewhat unusual,
22 particularly the limitation "so that when said precursor of a metal oxide is a
23 tin oxide precursor, and said accelerant includes water, said composition
24 also contains at least one of said organic phosphites or organic borates."
25 It is not entirely clear to us where the quoted limitation finds support
26 in the specification.
27 From the specification, we learn that Appellants believe that borate
28 and phosphite esters, alkyltin halides, and water are accelerants. Col. 9,
29 lines 31-34. We also find data reported from experimental work involving
30 (1) water—Table I and (2) trimethylphosphite—Table II. We also find
31 examples describing the use of (1) a tin oxide precursor (MBTC, which is
24
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