Appeals 2006-2874 and 2006-2747
Applications 08/544,212 and 09/287,664
Patent 5,401,305
1 Appellants discovered a mixture which they say has made CVD rates
2 possible at rates greater than about 350 Ǻ/sec. Col. 4, lines 18-21.
3 The mixture comprises a precursor for a metal oxide, a precursor for
4 silicon dioxide and one or more additives. Col. 4, lines 21-39.
5 According to the specification, a variety of suitable precursors of
6 metal oxides, including volatile compounds of tin, germanium, titanium,
7 aluminum, zirconium, zinc, indium, cadmium, hafnium, tungsten,
8 vanadium, chromium, molybdenum, iridium, nickel and tantalum.
9 Col. 4, lines 46-53 and col. 5, lines 40-45.
10 Further according to the specification, suitable precursors for silicon
11 oxide include those described by the general formula RmOnSip, where m is
12 from 3 to 8, n is from 1 to 4, p is from 1 to 4 and R is hydrogen or certain
13 organic radicals. Col. 4, line 64 through col. 5, line 2.
14
15 Prosecution history of application leading to the patent
16 The prosecution history of the application leading up to the patent
17 sought to be reissued is relatively straightforward.
18 As filed, Appellants submitted the following original claim 1 (matter
19 in brackets added):
20 A gaseous composition at a temperature
21 below about 200°C at atmospheric pressure,
22 adapted to deposit at least a first layer of tin oxide
23 and silicon oxide onto glass at a rate of deposition
24 greater than about 350 Ǻ/sec. at a temperature
25 below about 200°C, at atmospheric pressure,
26 wherein the composition comprises [1] a precursor
27 of tin oxide, [2] a precursor of silicon oxide, [3] an
28 accelerant selected from the group consisting of
4
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Next
Last modified: September 9, 2013