Appeal 2007-0127
Application 09/749,916
1 33. Degner describes a first insulating ring 90 and a second insulating
2 ring 92 around the outer periphery of the electrode assembly. (Degner, col.
3 8, ll. 40-42).
4 34. Degner’s insulating rings are said to protect the support ring 14
5 from direct contact with the plasma and enhance the electrical field
6 properties of the electrode plate 12 during use. (Degner, col. 8, ll. 42-45).
7 35. Degner describes electrically and thermally conductive adhesive
8 materials for bonding the support frame to the electrode to form a ductile
9 bonding layer. (col. 5, l. 68 - col. 6, l. 2, col. 6, ll. 36-43).
10 36. According to Degner, the support frame is bonded to the electrode
11 adhesively to form a ductile bonding layer.
12 Murai
13 37. Murai describes an electrode structure for a plasma processor
14 (Translation, p. 2, ll. 2).
15 38. Murai describes an electrode for use in parallel plate high
16 frequency [RF] plasma processors. (Translation, p. 4, ll. 12-14).
17 39. Murai describes a silicon single crystal electrode with a resistivity
18 of 0.1 ohm-cm or less. (Translation, p. 3, ll. 15-18).
19 40. Murai describes various embodiments of electrodes having a
20 resistivity as “desired.” (Translation, p. 5, ll. 8-12).
21 41. Murai teaches that arsenic doped silicon crystal can have a
22 resistivity of 0.005 ohm-cm or less. (Translation, p. 5, l. 11).
23 42. Murai teaches a “utility” embodiment of from 1-0.001 ohm-cm.
24 (Translation, p. 5, ll. 12).
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Last modified: September 9, 2013