Appeal 2007-0127
Application 09/749,916
1 43. Murai teaches that the amount of the doping gas supplied varies
2 depending on the size of the chamber, number of sheets to be doped, speed
3 of the doping process, and other factors. (Translation, p. 6, last 3 lines).
4 Saito
5 44. Saito describes a parallel plate plasma etching electrode. (col. 1,
6 ll. 6-7).
7 45. Saito teaches that conventional electrodes wear down during
8 plasma etching. (col. 1, ll. 20-25)
9 46. Saito describes a plasma electrode of single crystal silicon with
10 holes of 0.5 mm bored into the electrode. (col. 3, ll. 15-18).
11 47. Saito describes multiple electrodes (Ex. 1-22, Tbl. 1, col. 3-4)
12 with electric resistivities of 35, 15, 2, 0.1, 0.01, and 0.003 ohm-cm.
13 Uwai
14 48. Uwai describes a plasma etching electrode plate for etching a
15 wafer. (col. 1, ll. 10-13).
16 49. Uwai teaches a thicker electrode is better than a thinner electrode
17 for durability. (col. 2, ll. 62-63).
18 50. Uwai teaches avoiding thin, warpable sheet electrodes for
19 durability. (col. 2, ll. 60-65).
20 51. Uwai describes keeping surface temperatures uniform across the
21 plate of the electrode. (Id).
22 52. Uwai teaches that a thermally conductive, thick electrode plate
23 effectively suppresses the fluctuation of surface temperature distribution and
24 results in a uniform etching rate and a long life. (col. 4, ll. 27-36).
9
Page: Previous 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Next
Last modified: September 9, 2013