Appeal 2007-0908
Application 10/152,077
We observe first that the water vapor from the water rinse raises the
humidity of the processing chamber, thereby meeting step [1] of creating an
atmosphere. The introduction of IPA vapor into the processing chamber
while rinsing fluid is being sprayed onto the wafer at t = -2 s, two seconds
before the water flow stops, meets steps [2a] and [2b], as well as step [1]. At
t = -2 s, the wafer is being rotated at 300 rpm. The IPA vapor continues to
be introduced for eight seconds after the water flow is stopped at t = 0.
During this time, the wafer continues to rotate at 300 rpm and, according to
Ueno, large drops of water mixed with IPA are spun off the wafer. (Ueno
at 9:61-63; FF 31.) This is a "drying step." The rotational speed of 300 rpm
is a "predetermined rotational drying speed," as required by step [3a]. The
IPA vapor introduced between t = 0 and t = 8 s is introduced during the
initial portion of the drying step, as required by condition [3b2].
This prophetic example is not an anticipation because a "drying gas"
is not introduced into the processing chamber, together with the IPA vapor,
as required by condition [3b1]. The Examiner explained his reliance on
Ueno’s disclosure at 7:15-20 as providing the necessary teaching by
asserting that adding IPA was part of an additional drying step. (Answer
at 3 and at 7, paragraph ‘3)’.) While this explanation is not necessarily
inconsistent with our claim construction that the drying step can comprise
further contact with organic materials, it is not clear why the Examiner has
relied on a teaching of introducing nitrogen gas along with liquid IPA.
Immediately following its description of introducing gaseous IPA to displace
the rinse water, Ueno teaches that, in place of pure IPA vapor, "[i]t is also
possible to use a mixture of IPA vapor and diluting N2, having a temperature
of from room temperature to a boiling point [of IPA, ~82°C]." (Ueno
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