Ex Parte Christenson et al - Page 13

                Appeal 2007-0908                                                                                 
                Application 10/152,077                                                                           
                38. According to Ueno, rinsing nozzle 7 and replacing medium nozzle 8                            
                are moved outward across the wafer to scan it, "with the nozzle 7 going                          
                ahead of the nozzle 8, so that the pure water and IPA vapor are essentially                      
                simultaneously supplied.  By doing so, the pure water supplied on the wafer                      
                W is immediately removed by the IPA vapor, thereby effectively preventing                        
                water marks from being generated."  (Ueno at 12:22-31.)                                          
                       Yoneda                                                                                    
                39. Yoneda teaches methods of spin cleaning semiconductor wafers.                                
                (Yoneda at 1:6-9.)                                                                               
                40. In particular, Yoneda teaches in the flow chart shown in Yoneda                              
                figure 2, step S1, purging the inside of the chamber with hot N2 for 1 minute.                   
                (Yoneda at 9:63-66.)                                                                             
                41. Yoneda also teaches rinsing the wafer with ultrapure water (Figure 2,                        
                S5), spraying with IPA at 25�C (S6), and with IPA and N2 at 100�C (IPA                           
                boils at ~82�C at 1 atmosphere pressure) to decrease spot generation (S7),                       
                followed by further N2 spray at 100�C (S8).  (Yoneda at 11:14-33.)                               
                       Bergman                                                                                   
                42. Bergman teaches a vapor-assisted rotary drying process for                                   
                semiconductor wafers in which a wet water-rinsed wafer is mounted                                
                vertically.  (Bergman at 3:49-67.)                                                               
                43. The preferably not moving wafer is then exposed to a vapor stream of                         
                a low vapor pressure substance such as isopropyl alcohol, and brought to a                       
                first rotation speed of 300-700 rpm, low enough to allow condensate to form                      
                on the wafer and displace the rinsing fluid (water).  (Bergman at 4:1-35.)                       

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