Appeal 2007-0908
Application 10/152,077
at 10:45-68, together with the description at 7:15-20, which the Examiner
finds describes spraying nitrogen and IPA on the surface of the wafer during
drying. (Answer at 3.) The Examiner finds that Yoneda describes creating
an atmosphere by purging the processing chamber with nitrogen, and
concludes that it would have been obvious to perform that function in order
to remove contaminants. The Examiner also finds that Yoneda teaches the
step of applying IPA with nitrogen to dry the wafer surface. (Id.)
Christenson opposes the Examiner's rejection, finding instead that
Ueno "in all descriptions of its various methods specifically requires that a
spin drying operation be conducted AFTER an IPA flow is stopped (see
specifically . . . col. 11, lines 19–26.)" (Br. at 11; emphasis original.)
Christenson objects further that Ueno's step of providing IPA in liquid or gas
form as a replacing medium is "distinctly different" from the drying step
recited in the appealed claims. (Id. at 12.) According to Christenson, "[t]he
drying step of Ueno is defined by stopping the IPA flow and then
performing a series of spin dry steps at predetermined rotational speed and
for predetermined time periods. As such, it is clear that the replacement step
is completed before the spin dry or removing step." (Id.) Christenson
argues that Ueno "distinctly characterizes its drying operation by high speed
rotation of the substrate of between 3000 rpm and 5000 rpm as compared to
the low speed rotation (300 rpm) that is used during the rinsing and
replacement steps." (Br. at 12.) Christenson cites several passages in Ueno
in support of its contention. (Id., citing inter alia col. 11, ll.19 and 38.) In
contrast, according to Christenson, the method of claim 1 requires that the
STRA be continued to be delivered after the rinsing step, through at least the
beginning of the drying step, while also providing a drying gas. (Id.)
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