Ex Parte Bullied et al - Page 8

               Appeal 2007-1488                                                                       
               Application 10/809,072                                                                 











          1                                                                                           
          2         12. Burd’s Figure 2 is said to depict a mold assembly, wherein                    
          3               relevant reference numerals 12, 18, and 20 represent a cavity, a            
          4               helix crystal selector, and a starter chamber, respectively.                
          5               (Burd, 2:3-48.)                                                             
          6         13. The Examiner found that Burd describes every element of the                   
          7               claimed invention except it does not explicitly disclose “a seed            
          8               crystal for initiating epitaxial crystal growth in molten metallic          
          9               material...” as recited in appealed claim 1.  (Answer 4.)                   
         10         14. Applicants do not dispute the Examiner’s finding in this regard.              
         11         15. Monte ‘468 teaches that a single crystal seed may be used in                  
         12               association with the crystal (grain) selector to provide an “even           
         13               closer correspondence between the secondary orientation of the              
         14               cast articles and the selected secondary orientation.”  (Monte              
         15               ‘468, 22:18-23.)                                                            
         16         16. Likewise, Monte ‘469 teaches that seed crystal may be used in                 
         17               combination with the crystal (grain) selector “[t]o enable only             
         18               the main crystal having the desired crystallographic orientation            

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