Appeal 2007-2532
Application 10/608,791
changing the doping in the organic polymer in response to various
techniques. (Specification at 4.)
3. We refer the interested reader to Jackson Figure 9 and to associated
text (Specification at 9–11) for descriptions of embodiments corresponding
to memory elements covered by the claims.
4. Claim 4 depends on claim 3, which depends on claim 2, which
depends in turn on claim 1. (Br. App. at 16.)
5. Claim 2 requires first and second memory states that have higher and
lower resistivities, respectively. (Br. App. at 16.)
6. Claim 3 requires that memory state transitions be initiated by applying
one or more listed "facilitating agents," such as heating, electrical voltage,
etc. (Br. App. at 16.)
7. Polymer-based memory elements as recited in Claim 4, have dopant
chemical entities that are inactive in a first (high resistivity) memory state
and active in a second (low resistivity) memory state. (Br. App. at 16.)
8. Such memory elements appear to be described most nearly in
Figure 9, embodiments 926 (high resistivity state) and 928 (low resistivity
state), which are shown below.
{Figure 9 is said to show an example of the invention.} 3
3 The text in curly braces following the Figures is provided to ensure
compliance with section 508 of the U.S. Rehabilitation Act for publication
4
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