Appeal 2007-2532
Application 10/608,791
Stasiak
12. Stasiak teaches a memory device as shown in Figure 1b of the
published application, shown below:
{Figure 1b is said to show a Stasiak logic cell.}
13. Referring to Figure 1b, the memory device comprises individual logic
cells 128 having an electrical conductor bi on top of a layer of
semiconducting polymer film 120 and electrical conductor 140 on the
bottom of layer 120 that are substantially perpendicular to conductor bi.
(Stasiak at 1, ¶ 19.)
14. As shown in figure 1b, Stasiak teaches that an organic dopant
material 112 can be added to the layer 120. (Stasiak at 1, ¶ 19.)
15. Stasiak teaches that the organic dopant material 112 can contain
electron acceptor or electron donor molecules or functional groups, such
that, in Stasiak's words, "[c]harge transport, in the form of hole or electron
transport, may thus occur between adjacent donor or acceptor molecules,
respectively. Such a process can be described as a one-electron oxidation or
reduction process between neutral functional groups and their charged
derivatives." (Stasiak at 2, ¶ 23.)
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