Appeal No. 96-1584
Application 08/066,697
wherein said PN junction is spaced apart from said sidewalls
of said semiconductor island region, and said material capable of
distributing a voltage applied thereto is coupled to receive a
prescribed bias voltage that is insufficient to cause the
avalanche-generation of electron-hole pairs in the vicinity of
said relatively high-to-low impurity concentration junction.
24. A semiconductor device comprising:
a semiconductor substrate containing a semiconductor island
region of a first conductivity type having sidewalls which abut a
first side of dielectric material that prescribes said island
region, a second side of said dielectric material being
contiguous with material capable of distributing a voltage
applied thereto;
a first semiconductor region of said first conductivity
type, and having an impurity concentration different from that of
said island region, disposed in said island region and defining a
relatively high-to-low impurity concentration junction between
said semiconductor region and said island region, said relatively
high-to-low impurity concentration junction intersecting said
dielectric material at a sidewall of said semiconductor island
region, said relatively high-to-low impurity concentration
junction corresponding to a readily measurable transition of
doping concentration within said island region, as opposed to a
graded profile from high-to-low doping such as a Gaussian
distribution from a top surface of said island region toward the
bottom of said island region or a low-to-high retrograde profile
measured from said top surface of said island region;
a second semiconductor region of a second conductivity type
disposed in said island region and defining a PN junction between
said second semiconductor region and said island region, said
island region and said second semiconductor region being coupled
to receive respective bias voltages which reverse bias said PN
junction; and
wherein said PN junction is spaced apart from said sidewalls
of said semiconductor island region, and said material capable of
distributing a voltage applied thereto is coupled to receive a
prescribed bias voltage, said prescribed bias voltage having a
value such that, when said material capable of distributing a
voltage applied thereto is biased at said prescribed bias
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