Appeal No. 96-2821
Application 08/015,007
from a three-layer Cu/Mo/Cu-clad material. (Paper 1 at 5.)
According to Applicants, "it is necessary to use the Cu/Mo/Cu
clad material of thickness ratio from 1:3:1 to 1:5:1 so as to
prevent the inadequate leak of the glass". (Paper 1 at 9; see
also p. 8.) A leadframe 12 is fixed to the base plate 11 on one
side and a window frame 15 on the other using a low-melting point
glass 13. Applicants disclose a cap 16 bonded to the window
frame 15. (Paper 1 at 7.) The specification recommends two
properties for the glass 13: a dielectric constant (,r) of 14 or
less and a thickness (B) of "06." millimeters (mm) or more.
(Paper 1 at 12.) The specification also states that "the
thickness (B) of glass 13 between the base plate 11 and the
window frame 15 [is] 0.6mm". (Paper 1 at 12.) Reading these two
statements together, we understand the total thickness of the two
glass layers 13 taken together is not less than 0.6 mm.
6. Claim 5, the only claim remaining in the application,
reads as amended:
A semiconductor package comprising:
a base plate formed of a three layer Cu/Mo/Cu clad
material for attaching to a semiconductor chip,
a leadframe for receiving at least one lead, said
leadframe being bonded by an adhesive to said base
plate,
a window frame surrounding the semiconductor chip
and bonded by said adhesive to said leadframe, and
a cap bonded to said window frame,
wherein said adhesive has the dielectric constant of
not more than 14 and a thickness of not less than 0.6mm.
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