Appeal No. 96-2821
Application 08/015,007
dielectric constants of 12.0 to 35.0. (p. 4.) He claims a lower
dielectric constant because lower dielectric constants correlate
to higher propagation rates for high-speed semiconductors.
(p. 3.)
20. Matsumoto's package can have a ceramic substrate 1
(i.e., it can be a CERDIP). He uses glass as an adhesive to the
substrate. (p. 5.) Glass is also used to encapsulate the
leads 5 on top of the substrate 1. (p.6.) Matsumoto uses glass
and resin as his adhesive. (p. 7.)
21. We find the cited references to be indicative of the
level of skill in the art. See In re GPAC, 57 F.3d 1573, 1579,
35 USPQ2d 1116, 1121 (Fed. Cir. 1995).
22. Applicants's claimed geometry, which surrounded and
capped, presents a geometry very different than the geometry
disclosed in Iversen. Iversen indicates that geometry is a
critical factor in determining VSWR. (3:49-55.) Thus, the
specific applicability of Iversen's insulator thickness is, at
best, unknown. Iversen's general suggestion that one would
optimize VSWR by adjusting thickness and dielectric constant does
not help. (3:49-55.) Assuming, arguendo, that this suggestion
extends to the claimed geometry, there is no evidence that
optimization would produce the thickness and dielectric constant
ranges that Applicants have claimed. Thus, we cannot find a
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