Appeal No. 1997-3691 Page 2
Application No. 08/298,018
The appellant's invention relates to a method of fabricating a semiconductor device having a
self-aligned silicide region. Specifically, as disclosed on page 9, lines 21- 27 of the specification “the
self-aligned silicide regions can be performed [sic: formed] either before or after removal of the
disposable silicon nitride layer 58. . . [T]he result of forming the silicided regions after the removal of
silicon nitride layer 58 is depicted in figure 4a. The main difference . . . is the presence of silicided
region 41 on conductive gate structure 40." An understanding of the invention can be derived from a
reading of exemplary claim 6, which is reproduced as follows:
6. A method of fabricating a semiconductor device with a self-aligned silicide region, said
method comprising:
providing a semiconductor substrate of a first conductivity type, said semiconductor substrate
has a surface;
forming field insulating regions at said surface of said semiconductor substrate;
forming a gate structure insulatively disposed over said substrate and between said field
insulating regions, said gate structure having a top surface and a side surface and including a gate
electrode;
forming a disposable structure overlying said gate structure, said disposable structure having a
top surface and a side surface;
forming side wall insulators adjacent to said gate structure and said disposable structure and
extending along side surfaces of said gate structure and said disposable structure;
forming source/drain junction regions of a second conductivity type opposite said first
conductivity type, said source/drain junction regions formed in said substrate adjacent to said gate
structure and extending from said gate structure to said field insulating regions;
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