Appeal No. 1997-3691 Page 3
Application No. 08/298,018
providing a channel region disposed between said source/drain junction regions beneath said
gate structure in said substrate;
selectively removing said disposable structure;
providing a silicide region formed after said disposable layer is removed thereby forming said
silicide layer on said gate structure and on said source/drain junction regions, said silicide formed by
depositing a layer of metal, performing a react process and removing any unreacted metal and metal
composites;
forming separate electrically conductive regions by means of a nonselective conductive material
layer deposition process, each contacting one of said source/drain junction regions, and simultaneously
forming an electrically conductive region from the same conductive material on said silicide region
formed on said gate structure;
and wherein said silicide region formed on said gate structure is formed between said gate
structure and said conductive region, and said conductive region formed on said silicide region formed
on said gate structure is located in substantially the same location as the disposable structure with
substantially the same thickness as the disposable structure.
The prior art references of record relied upon by the examiner in rejecting the appealed claims
are:
Rodder 4,877,755 Oct. 31, 1989
Osinski (et al.) 4,885,259 Dec. 05, 1989
Thomas 4,920,071 Apr. 24, 1990
Feist 4,933,295 Jun. 12, 1990
Jin 5,070,038 Dec. 03, 1991
Huang (et al.) 5,130,266 Jul. 14, 1992
Sitaram (et al.) 5,352,631 Oct. 04, 1994
(filed Dec. 16, 1992)
Claims 6 and 10-13 stand finally rejected as follows:
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