Appeal No. 1998-0129 Page 27
Application No. 08/438,062
(page 3, paragraph 7) “Exhibit B shows that those skilled in
the art are only now coming to realize that BST materials
fundamentally have a better high frequency capacitance than do
PZT materials."
We find that Exhibit B of the McMillan Declaration,
entitled High Frequency Electrical Characteristics of BST
Capacitors,(ISIF 1996), by Jammy et al. (Jammy) characterizes
the dielectric properties of the same formulation of BST as
found in the capacitor of Koyama. According to Jammy, the BST
capacitor exhibited roll-off near 1 GHZ. According to the
McMillan Declaration (page 3, paragraph 7), the roll-off
appears at
0.5-0.7 GHz. However, we find that the Jammy BST capacitor
experienced roll-off because the BST capacitor of Jammy does
not utilize a gallium arsenide substrate and a diffusion
barrier layer. The McMillan Declaration states (page 3,
paragraph 8) that the problem of capacitance roll-off is
“overcome by using a gallium arsenide substrate and a
diffusion barrier layer before depositing the first
electrode.” We note that Miller teaches (col. 3, lines 40-41)
the use of a gallium arsenide substrate 12 and (col. 4, lines
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