Appeal No. 1998-2987 Page 3
Application No. 08/250,332
containing silicon is deposited on the metal layer by
sputtering at a temperature no greater than 150°C so that
silicon nodules are deposited at a boundary between the
conductive layer and the underlying metal layer. A rapid
thermal annealing treatment is applied so that the silicon
nodule are absorbed from the boundary layer into the
intermediate layer to form an alloy of aluminum, silicon, and
a metal of the underlying layer between the conductive layer
and the underlying layer.
Claim 22, which is representative for our purposes,
follows:
22. A method of forming wirings for
semiconductor devices comprising the steps of:
providing a semiconductor substrate having a
diffusion region contained therein;
depositing an interlayer insulating layer on the
semiconductor substrate;
forming at least one contact hole by removing a
portion of the interlayer insulating layer to expose
a selected portion of a surface of the semiconductor
substrate;
depositing an underlying metal layer over both
the interlayer insulating layer and the exposed
surface of the semiconductor substrate;
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