Appeal No. 1998-2987 Page 4
Application No. 08/250,332
depositing an electrically conductive layer of
aluminum material containing silicon on the
underlying metal layer by sputtering at a
temperature, said temperature being # 150°C so that
silicon nodules are deposited at a boundary between
the conductive layer and the underlying metal layer;
and
then absorbing the silicon nodule from the
boundary into an intermediate layer by applying a
heat
treatment by rapid thermal annealing to form the
intermediate layer of an alloy of aluminum, silicon,
and a metal of the underlying metal layer between
the conductive layer and underlying metal layer.
The references relied on in rejecting the claims follow:
Howard et al. (Howard) 4,154,874 May 15,
1979
Gardner et al. (Gardner) 4,673,623 June
16, 1987
Inoue 4,976,839 Dec. 11,
1990
Yamaha 5,036,382 July 30, 1991
Thomas et al. (Thomas) 5,117,276 May 26,
1992
(filed Nov. 8, 1990)
Chen et al. (Chen) 5,270,254 Dec. 14,
1993
(filed Mar. 27, 1991)
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