Ex parte TAGUCHI et al. - Page 8




          Appeal No. 1998-2987                                       Page 8           
          Application No. 08/250,332                                                  


               We also find the appellants' following argument                        
          particularly persuasive.                                                    
               Yamaha does not state what type of sputtering is                       
               occurring.  However, since Yamaha is concerned with                    
               obtaining an enhanced step coverage, Hoffman et al,                    
               on page 108, states a heated substrate is required,                    
               and this temperature appears to be greater than                        
               220°C.  Also, it is noted that Wolf et al, on page                     
               269, states that for improved coverage with aluminum                   
               films, the substrate must be heated to greater than                    
               250°C before significant coverage improvement is                       
               observed during sputtering.  Thus, it is believed                      
               that while Wolf et al talks about heated and                           
               unheated substrates during sputtering, these                           
               references illustrate that for desired coverage,                       
               heating above 200°C is required for good coverage                      
               and, thus, a person of ordinary skill in the art                       
               having the teachings of Wolf et al and Hoffman et                      
               al, as well as Yamaha, would not find it obvious to                    
               sputter at temperatures equal to or less than 150°C.                   
               It is also submitted that nothing has been shown in                    
               the references relied on by the Examiner to suggest                    
               that silicon nodules would be deposited at the                         
               boundaries between the conductive layers while                         
               sputtering at or below 150°C.                                          
          (Id. at 2-3.)  None of the other applied references cure the                
          deficiencies noted above.                                                   


               For the foregoing reasons, supplemented by the other                   
          reasons expressed by the appellants, we are not persuaded that              
          teachings from the prior art would have suggested the                       
          invention.  Therefore, we reverse the rejection of claims 22                







Page:  Previous  1  2  3  4  5  6  7  8  9  10  11  Next 

Last modified: November 3, 2007