Appeal No. 2000-2109
Application No. 09/159,609
Appellants' specification page 6, lines 4-16 and Figure 2.
Further, the )E-E detector telescope is fabricated by wafer
bonding a )E detector portion (14) in the form of a first
semiconductor wafer to an E detector portion (18) in the form of
a second semiconductor wafer by silicidizing a thin metal layer
(16). See Appellants' specification page 7, lines 21-28 and page
10, lines 19-25. The thin metal layer acts as a common contact
between the two detectors and represents a dead-layer which
minimizes cross-talk between the )E and E detector portions.
See Appellants' specification page 5, lines 28-32.
Independent claim 1 present in the application is reproduced
as follows:
1. A device forming a low threshold energy, low cross talk and
high energy resolution integrated semiconductor detector
telescope having a very thin well-supported )E detector portion
and a low resistivity metal interlayer, wherein a )E-E detector
telescope is fabricated by wafer bonding a )E detector portion
in the form of a first semiconductor wafer to an E detector
portion in the form of a second semiconductor wafer by
silicidizing a thin metal layer, said thin metal layer acting as
a common contact between the two detectors, whereby said metallic
layer explicit is thin and represents a small dead-layer and a
low resistivity, thereby minimizing cross-talk between the )E
and E detector portions.
References
The references relied on by the Examiner are as follows:
Meuleman 3,511,722 May 12, 1970
Husimi et al. (Husimi) 4,340,899 Jul. 20, 1982
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