Appeal No. 2000-2109
Application No. 09/159,609
detector. We cannot agree that a generic Temple teaching of
wafer bonding by silicidizing provides the necessary teaching and
suggestion to replace the prior arts teaching of a single wafer,
used in the Husimi )E-E detector, with first and second
semiconductor wafers as claimed.
Upon careful review of Husimi, we find that Husimi discloses
"[a]n epitaxial integrated E-dE solid state detector telescope
comprising a dE detector produced on an epitaxial layer and an E
detector produced on a high purity silicon layer, both of which
are fabricated on a single silicon wafer." See the abstract
lines 1-4 and column 1, lines 41-44 of Husimi. We further find
that, "[a B layer] is a heavily doped N+ type silicon layer which
is produced by diffusion of impure Antimony into [an N type
silicon substrate]." See Figure 2 and column 2, lines 60-67 of
Husimi. We find nothing in the Husimi reference that teaches two
semiconductor wafers and hence we find no teaching of bonding two
wafers by silicidizing a thin metal layer therebetween. Further,
we find Temple discloses that "emitter regions formed in the
backside of the device wafer may be electrically connected via a
metallic silicide . . .". See column 1, lines 53 and 54 of
Temple. We also find that Temple discloses that "[t]he two
wafers may then be selectively bonded in the areas 18
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