Ex Parte PETTERSSON et al - Page 4



            Appeal No. 2000-2109                                                                         
            Application No. 09/159,609                                                                   


                                                OPINION                                                  
                  After a careful review of the evidence before us, we do not                            
            agree with the Examiner that claims 1, 2, 4 through 6, 8 through                             
            10, 12 through 14 and 16 through 20 are unpatentable under                                   
            35 U.S.C. § 103.                                                                             
                  First we will address the rejection of claims 1, 2, 4                                  
            through 6 and 9 as being unpatentable under 35 U.S.C. § 103 over                             
            Husimi, Temple and Buti.  We note that claim 1 is the independent                            
            claim with claims 2, 4 through 6 and 9, dependent on claim 1.                                
                  Appellants argue that "[i]ndependent claim 1 calls for the                             
            first and second semiconductor wafers to be bonded together by                               
            'silicidizing a thin metal layer' therebetween."  (Emphasis                                  
            added).  See page 5, lines 25-27 of the Brief.  Appellants                                   
            further argue that,                                                                          
                  Husimi's device provides a completely distinct                                         
                  structure.  In particular, rather than a thin metal                                    
                  layer which bonds together and serves to electrically                                  
                  isolate two distinct semiconductor wafers, Husimi                                      
                  provides a single semiconductor wafer having an N+                                     
                  layer buried therein which isolates the dE detector                                    
                  from the E detector.  (Emphasis added).  See page 5,                                   
                  lines 29-34 of the Brief.                                                              
            Appellants then argue that neither the Temple nor the Buti                                   
            references describes or suggests "bonding a first semiconductor                              
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