Appeal No. 2001-2568
Application No. 09/178,848
further teaches that the lead formation is accomplished by
applying a mask over both the etched and non-etched regions
which would mask part of the sidewalls and etching through
the layer to form leads. (Answer, page 3). The examiner
further states that Fogelson teaches that a metal layer is
etched to a fraction of its original thickness and that
therefore Fogelson teaches first etching a pattern in the
layer extending partially through the layer. The examiner
states that because the layer is etched, it is inherent that
cavities with sidewalls are formed in the layer. The
examiner states that a mask is then applied over the etched
and non-etched regions of the layer thereby masking at least
part of the sidewalls the mask having openings in the shape
of the fine pitch leads and a second etch is performed. On
page 4 of the Answer, the examiner states that Fogelson does
not teach that during the second etching of the cavities,
the cavity sidewalls are masked. The examiner relies on
Liou for teaching masking the cavity sidewalls with further
etching then taking place with the cavity sidewalls masked.
(Answer, page 4). The examiner concludes it would have been
obvious to one of ordinary skill in the art to use the
sidewall’s basic formation method of Liou to prevent the
sidewalls of Fogelson from being etched.
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