A method of minimizing the carbon content in a layer of material atop a wafer
by chemical vapor deposition using an organometallic compound,
the method comprising the following steps:
positioning said wafer in a chemical vapor deposition reactor;
injecting said organometallic compound into said reactor
having said wafer positioned therein
at a temperature and pressure
to deposit on said wafer a layer of
metal nitride
containing significant
amounts of
carbon
to adversely affect the
resistivity of
said layer; and
after depositing said layer, post-treating said wafer in said reactor
with hydrogen gas and generating plasma
to reduce the carbon content of said layer and
thereby decrease the resistivity of said
layer.
Paper 11, pp. 1-2.
Leung 19.
The method of claim 13 wherein
both said step of depositing on said wafer a layer of metal nitride, and
said step of post-treating said wafer,
are repeated.
Paper 11, p. 3.
F 31. In Sandhu’s claims, the post-treatment step is
injecting hydrogen gas into the reactor and generating a first reactive
hydrogen plasma within the reactor against the first layer, the hydrogen
effectively diffusing into the first layer and reacting with hydrocarbons in the
first layer to produce gaseous products which diffuse outwardly of the first
layer and are expelled from the reactor.
Paper 7, p. 3-10.
F 32. Sandhu’s Claim 2, which is dependent upon Claim 1, is representative of the interfering
subject matter as claimed by Sandhu (emphasis and indentation added):
Sandhu 1.
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