to produce gaseous products
which diffuse outwardly of the second
layer and
are expelled from the reactor.
Paper 7, pp. 3-4.
Sandhu 2.
The chemical vapor deposition method of claim 1
wherein the organic precursor is an organometallic precursor.
Paper 7, p. 4.
F 33. The count is as follows:
Count 1
Claim 19 of Leung Application 09/128,143 or Claim 2 of Sandhu Patent 5,576,071.
Paper 1, p. 5.
The Involved Claims
F 34. The claims of the parties are:
Leung 13-28
Sandhu 1-28
Paper 1, p. 5.
F 35. The claims of the parties which correspond to Count 1 are:
Leung 13, 19, 20, 26
Sandhu 1, 2, 12, 13, 27, 28
Paper 1, p. 5.
F 36. The claims of the parties which do not correspond to Count 1, and therefore are not involved
in the interference, are:
Leung 14-18, 21-25, 27, 28
Sandhu 3-11, 14-26
Paper 1, p. 5.
-8-
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 Next
Last modified: November 3, 2007