A method of minimizing hydrocarbon incorporation in a layer of material
provided atop a wafer by chemical vapor deposition using an organic
precursor,
the method comprising the following steps:
positioning a wafer within a chemical vapor deposition reactor;
injecting an organic precursor within the reactor having the wafer
positioned therein, and
maintaining the reactor
at a temperature and
a pressure
which in combination are effective to deposit a first layer of
material onto the wafer
which incorporates carbon from the organic precursor
in the form of hydrocarbons;
after depositing the first layer,
ceasing to inject the organic precursor into the reactor and
first injecting hydrogen gas into the reactor and
generating a first reactive hydrogen plasma within the reactor
against the first layer,
the hydrogen effectively diffusing into the first layer
and
reacting with hydrocarbons in the first layer
to produce gaseous products
which diffuse outwardly of the first
layer and
are expelled from the reactor;
after the first reactive hydrogen plasma treatment,
injecting the organic precursor and carrier gas within the
reactor, and
maintaining the reactor at a
temperature and
a pressure
which in combination are effective to deposit a second
layer of the material onto the wafer
which incorporates carbon from the organic
precursor; and
after depositing the second layer,
ceasing to inject the organic precursor into the reactor and
second injecting hydrogen gas into the reactor and
generating a second reactive hydrogen plasma within the
reactor against the second layer,
the hydrogen effectively diffusing into the second
layer and
reacting with carbon in the second layer
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Last modified: November 3, 2007