Ex Parte SANDHU - Page 28




                Application 09/128,143, Specification, p. 8, ll. 6-8.  The 143 Specification notes that when these ion                      
                bombarded films are exposed to air, water vapor or oxygen                                                                   
                                the oxygen is not absorbed, or is absorbed to a much lesser extent than when                                
                                no bias voltage has been applied.                                                                           
                Application 09/128,143, Specification, p. 8, ll. 10-11.  Further, with respect to the ion bombarded                         
                films, the 143 Specification notes that “the treated titanium films of the invention” are more                              
                crystalline, contain more nitrogen and have reduced amounts of oxygen and carbon when compared                              
                to conventional (untreated) films.   Application 09/128,143, Specification, p. 8, ll. 11-16.  The TiN                       
                films “of the invention” are also stated to have a low, stable sheet resistivity.  Application 09/128,143,                  
                Specification, p. 8, ll. 16-17.                                                                                             
                        To demonstrate the advantages said to be achieved with the process “of the invention,” the 143                      
                Specification also compares the results for films produced using a plasma and ion bombardment with                          
                films made using other techniques which did not include a plasma or ion bombardment.  Application                           
                09/128,143, Specification, p. 9, l. 5 - p. 11, l. 24.                                                                       
                        The 143 Specification describes CVD of TiN, said to have been done using prior art                                  
                parameters, resulted in an unacceptably high average resistivity of 11,360 :ohms-cm/sq which                                
                significantly increased on exposure to air.  Application 09/128,143, Specification, p. 9, l. 5 - p. 10, l. 2                
                and Fig. 2.  Testing of these films was said to show an unacceptably high level of carbon and oxygen.                       
                Application 09/128,143, Specification, p. 10, ll. 3-11 and Fig. 3.  The 143 Specification also describes                    
                modifying  the  TiN  deposition  technique  in  an  effort  to  reduce  the  unacceptable  resistivity.                     
                Application 09/128,143, Specification, p. 10, ll. 12 - p. 11, l. 20.  First, additional gases were added                    
                during the TiN deposition step, apparently without any post treatment.   Application 09/128,143,                            
                Specification, p. 10, ll. 12 - p. 11, l. 20.  The results are summarized in Table 1.  Application                           
                09/128,143, Specification, p. 10.  The results were compared with control samples said to have been                         
                prepared according to a prior art process.  The prior art control samples were reported as having a                         
                resistivities of 11,360 (Application 09/128,143, Specification, p. 9, ll. 21-22) and 16,000 (Application                    
                09/128,143, Specification, p. 10, Table 1).  Only Example C2, which added NF3, was said to decrease                         
                resistivity compared to the control samples.   Application 09/128,143, Specification, p. 10, Table 1,                       
                Example C2.  However, Example C2 was said to be unacceptable because of high fluorine content.                              
                Application 09/128,143, Specification, p. 10, l. 28 - p. 11, l. 3.  The other examples (C1, C3 and C4)                      

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