Ex Parte SANDHU - Page 26




                                                                    C.1.                                                                    
                        The section of the 143 Specification tilted “Background of the Invention” notes problems with                       
                certain prior art CVD processes for making TiN films:                                                                       
                                the resistivity of the titanium nitride film is high and unstable.  Over time the                           
                                resistivity increases to such an extent that the film is no longer usable for                               
                                semiconductor devices.                                                                                      
                Application 09/128,143, Specification, p. 2. l. 23 - p. 3, l. 1.  More specifically the 143 Specification                   
                says the properties of TiN films made according to the prior art contain undesirable amounts of                             
                carbon which causes the resistivity to degrade when exposed to the atmosphere:                                              
                                The titanium nitride obtained contains significant amounts of carbon, and the                               
                                resultant titanium nitride films are chemically reactive. Thus when the films                               
                                are exposed to air or other oxygen containing gas, oxygen is absorbed and the                               
                                films then contain both carbon and oxygen as impurities. Since the oxygen                                   
                                absorption is uncontrolled, the stability of the films is impaired, which                                   
                                adversely affects the resistivity of the film in particular, in addition to possibly                        
                                impairing the reliability of devices made from the films.  After exposure to air,                           
                                the sheet resistivity of these titanium nitride films can increase to values of                             
                                about 10,000 :ohms-cm/sq up to about 100,000 :ohms-cm/sq, which is                                          
                                highly undesirable when using the film as a barrier layer for conductive                                    
                                contacts and vias.                                                                                          
                Application 09/128,143, Specification, p. 7, ll. 4-17.                                                                      
                        The 143 Specification notes that there is a need for a technique which will both reduce                             
                resistivity and enhance the stability of CVD films:                                                                         
                                Thus a method of treating a titanium nitride film deposited by chemical vapor                               
                                deposition that will modify the film to reduce its resistivity and improve its                              
                                stability is highly desirable.                                                                              
                Application 09/128,143, Specification, p. 3, ll. 16-19.  The 143 Specification notes that for barrier                       
                layer films stable sheet resistivities should be less than about 1000 :ohms-cm/sq:                                          
                                For that application, stable sheet resistivities on the order of about 1000                                 
                                :ohms-cm/sq or less are desired.                                                                            
                Application 09/128,143, Specification, p. 7, ll.17-19.  The specification also notes that resistivity on                    
                the order of 10,000 :ohms-cm and higher are unacceptable.  Application 09/128,143, Specification,                           
                p. 7, ll. 13-17.                                                                                                            



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