F 116. Leung provoked this interference by submitting a preliminary amendment cancelling original
Claims 1-12 and adding new claims 13-28. Application 09/128,143, Paper 4, pp. 1-5.
F 117. Leung’s new Claims 13 and 20, the only independent claims, were said to be “substantially
copied” from Sandhu Claims 27 and 28. Application 09/128,143, Paper 4, p. 6.
F 118. None of Leung’s Claims 13-28 require either bombarding the film with high energy ions or
exposing the film to a plasma while applying a bias voltage.
F 119. Leung’s involved Claim 13 requires only that
after depositing said layer, post-treating said wafer in said reactor with
hydrogen gas and generating plasma to reduce the carbon content of said layer
and thereby decrease the resistivity of said layer.
Application 09/128,143, Paper 4, p. 2.
F 120. Leung’s Claim 20 is essentially the same except that the layer is specified to be a metal
nitride:
after depositing said layer, post-treating said wafer in said reactor with
hydrogen gas and generating plasma to reduce the carbon content of said
metal nitride and thereby decrease the resistivity of said layer.
Application 09/128,143, Paper 4, pp. 3-4.
Findings on written description
F 121. The preliminary amendment filed August 3, 1998 (Application 09/128,143, Paper 4) is not
part of the original specification of the 143 Application and can not be relied upon as part of
Leung’s original disclosure.
F 122. The invention described in the original specification of the 143 Application is a process
utilizing a post treatment with a plasma and high energy ions such as created by applying a
bias voltage during the post-treatment.
F 123. The original specification of the 143 Application does not convey possession of a process for
reducing resistivity of CVD films without applying high energy ions to the film.
F 124. The only way described in the original 143 Specification for significantly reducing resistivity
without introducing undesired impurities employs a post-treatment with a plasma while
applying a biasing voltage.
F 125. The written description of the 143 Specification does not describe reducing resistivity of CVD
films by post-treating with plasma without also subjecting the film to high energy ions.
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