F 78. In two of the processes (Examples C5 and C6), the substrate was said to be exposed to
hydrogen and nitrogen plasmas, respectively, both before and after CVD deposition of TiN.
Application 09/128,143, Specification, p. 11, Table II, Examples C5 and C6.
F 79. The 143 Specification specifically notes that in making the films of Examples C5 and C6 the
substrate was not biased:
a plasma was initiated before and after chemical vapor deposition of titanium
nitride using a low power of 100 watts and without biasing the substrate
silicon wafer.
Application 09/128,143, Specification, p. 11, ll. 6-9 (emphasis added).
F 80. The films of Examples C5 and C6 were said to have resistivities of 13,500 and 15,500
:ohms-cm. Application 09/128,143, Specification, p. 11, Table II.
F 81. The effect of the plasma treatment on the carbon content of the films of Examples C5 and C6
is not described in the 143 Specification.
F 82. The effect of the plasma treatment on the stability of the resistivity of the films of Examples
C5 and C6 is not described in the 143 Specification.
F 83. A third process (Example C7) was said to include post-treating the CVD film with NF3.
Application 09/128,143, Specification, p. 11, Table II, Example C7.
F 84. Example C7 was reported as having a resistivity of 16,500 :ohms-cm. Application
09/128,143, Specification, p. 11, Table II, Example C7.
F 85. The 143 Specification characterizes the pre- and post-treatments of Examples C5, C6 and C7
as having little effect on resistivity:
It is apparent that none of these pre- and post-treatments had much effect on
the sheet resistivity.
Application 09/128,143, Specification, p. 11, ll. 19-20.
F 86. The 143 Specification emphasizes that a technique for reducing resistivity and improving
stability of TiN films is desired:
Thus a method of treating a titanium nitride film deposited by chemical vapor
deposition that will modify the film to reduce its resistivity and improve its
stability is highly desirable.
Application 09/128,143, Specification, p. 3, ll. 16-19.
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