F 99. The 143 Specification notes that when films which have been subjected to a plasma and bombarded with high energy ions are exposed to air, water vapor or oxygen the oxygen is not absorbed, or is absorbed to a much lesser extent than when no bias voltage has been applied. Application 09/128,143, Specification, p. 8, ll. 4-19. F 100. The 143 Specification also notes that “the treated titanium films of the invention” are more crystalline, contain more nitrogen and have reduced amounts of oxygen and carbon when compared to the prior art films. Application 09/128,143, Specification, p. 8, ll. 11-16. F 101. The 143 Specification indicates that the improved properties of the films results from densification due to high energy ion bombardment: Although the exact mechanism of the present invention is not known, we believe the high energy ion bombardment of the films on a biased substrate densifies the films. Application 09/128,143, Specification, p. 8, ll. 6-8 (emphasis added). F 102. The 143 Specification expresses the view that the densification of the film by bombardment with high energy ions from the biased plasma results in reduced oxygen absorption: We believe that biasing the substrate in the plasma bombards the surface with high energy ions that densify the film, and in turn reduce the absorption of oxygen by the film after exposure to atmosphere. Application 09/128,143, Specification, p. 4, l. 2-6 (emphasis added). F 103. The 143 Specification reports the results of Rutherford back scattering spectrum (RBS) density testing of Examples 7, 8 and the control. Application 09/128,143, Specification, p. 15, ll. 3-9. F 104. The densities of Examples 7 and 8 were reported to be higher than the density of the control. Application 09/128,143, Specification, p. 15, Table IV. F 105. The 143 Specification then concludes: Thus plasma treatment and bombardment with high energy ions increased the density of titanium nitride films as compared to the Control. Application 09/128,143, Specification, p. 15, ll. 10-12 (emphasis added.). F 106. The 143 Specification also reports the results of Auger analysis of the atomic concentration of the elements vs. sputter depth etch of the TiN layer said to have been made in Examples -19-Page: Previous 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 NextLast modified: November 3, 2007