Application 09/128,143, Specification, p. 8, l. 23 - p. 9, l. 4.
F 92. In stating that the invention should not be limited to expressly disclosed details, the
143 Specification notes only that the invention should not be limited to TiN and that other
materials may benefit from the use of a bias voltage during the plasma treatment:
The present invention is not meant to be limited to titanium nitride barrier
layers and the post deposition bias voltage in a plasma treatment of the
invention can serve to improve properties and chemical composition of other
materials as well . . . .
Application 09/128,143, Specification, p. 15, ll. 13-17 (emphasis added).
F 93. The 143 Specification includes a comparison of the resistivity of a control sample made
according to the prior art CVD process with the resistivities of eight examples post-treated
with a plasma and a bias voltage. Application 09/128,143, Specification, p. 12, ll. 1-32.
F 94. The control sample was said to have an initial resistivity of 11,020 :ohms-cm which
increased by 130% in 24 hours. Application 09/128,143, Specification, p.12, Table III,
Control.
F 95. Examples 1-8, each plasma post-treated with nitrogen while applying a bias of 400 volts,
were reported as having significantly lower resistivities and significantly lower resistivity
change over 24 hours. Application 09/128,143, Specification, p. 12, Table III, Examples 1-8.
F 96. These bias-treated films which are said to have resistivities ranging from 913 to 4,620 and
increases in resistivity of 2 to 43% over 24 hours. Application 09/128,143, Specification, p.
12, Table III, Examples 1-8.
F 97. Apparently based upon the Examples 1-8 in Table III, the 143 Specification states the
following conclusion:
Thus titanium nitride resistivity can be markedly reduced and stability
dramatically improved, e.g., a 2% increase in resistivity over 24 hours, by a
post treatment of titanium nitride films applying a bias voltage to the substrate
in a nitrogen or other plasma.
Application 09/128,143, Specification, p. 12, l. 32 - p. 13, l. 1 (emphasis added).
F 98. These TiN films “of the invention” are stated to have a low, stable sheet resistivity.
Application 09/128,143, Specification, p. 8, ll. 16-17.
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