Appeal 2006-3363
Application 10/873,363
10. In the first method, vias 47 and 50 are etched in different
processes. Vias 47 are etched through both the dielectric cap 45
and 32 in one step using convention etching methods such as
reactive ion etch (RIE). Note, the GMR element is protected in
this step by cap and dielectric system discussed in fact 7. The vias
50 are then etched through dielectric cap 45 using two etching
steps, the first to an etch stop layer using conventional etching
methods. After the etch stop layer is removed from via 50, the via
is etched again to the depth of GMR element. This second etching
of via 50 is performed using different chemistry which does not
damage the GMR element. Col. 5, ll. 22-53.
11. In the via forming method of fact 10, the via areas 50, may be
outside the end of the GMR layer. Col. 5, ll. 36-38
12. In the second method of etching vias 47 and 50, both vias are
formed in a single operation. Col. 5, ll. 54-55.
13. In the second method of etching vias 47 and 50, the first layer of
dielectric system 45 is conductive etch stop material. Col. 5, ll. 55-
56, col. 6, ll. 9-11.
14. In the second method, the etch stop layer is made of a material that
is unreactve to RIE etches (which are corrosive to GMR material).
Thus, via 50, is etched to the depth of the etch stop. Col. 5, ll. 65-
67.
15. In the second method, the vias 50 must not extend beyond the ends
of the GMR element. This is to protect the GMR element from the
stripping process. Col. 5, ll. 59-62.
6
Page: Previous 1 2 3 4 5 6 7 8 9 Next
Last modified: September 9, 2013