Appeal 2007-2494
Application 10/161,134
claims 12-14 and 58-60, all of the claims pending in this Application. We
have jurisdiction under 35 U.S.C. § 6(b) (2002). We REVERSE.
The subject matter on appeal is directed to a method of reducing foot
formation in photolithographic semiconductor fabrication. Claim 12 is
illustrative and reads as follows:
12. A method of forming a patterned structure,
comprising:
forming a first layer of a first material on a
substrate;
forming a second layer of a second material
consisting of one of undoped silicon and
conductively-doped silicon over the first layer;
forming a layer of imagable material on the second
layer;
patterning the imagable material;
transferring a pattern from the patterned imagable
material to the underlying second material and first
material to form a patterned structure comprising
the second material and first material; the
patterned structure having a pair of opposing
sidewalls extending upwardly from the substrate; a
pair of opposing corners being defined where the
sidewalls join the substrate, a distance between the
opposing corners being less than the distance
would be were the second material absent during
the patterning of the imagable material; and
after transferring the pattern to the underlying
second material and first material, removing the
imagable material and the second material from
the patterned structure.
2
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