Appeal 2007-2494
Application 10/161,134
{Figure 7 is said to show a fragment of a wafer during processing according
to the method of the invention lacking laterally extending portions.}
[16] In other words, when the pattern 26a formed in the photoresist 26 is
transferred to the underlying layers to form a patterned structure 60
having a pair of opposing sidewalls 61 extending upward from the
substrate 12, opposing corners 63-63 and 65-65 of the sidewalls 61 are
said to be closer to each other than opposing corners 43-43 and 45-45
of the prior art (Figure 3) due to lack of laterally extending portions
42 (id.).
B. Mason
[17] Mason discloses a photolithographic method of transferring a pattern
to the surface of a semiconductor, which method is said to address the
problem of foot formation in the photoresist (Mason at 1-2).
[18] Mason describes sequentially depositing an oxide layer 12, nitride
layer 14, optical assist layer 16 and photoresist layer 22 on a substrate
10, as shown in Figure 2 reproduced below (Mason at 4-5, ¶¶ 5-6).
7
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