Appeal 2007-2494
Application 10/161,134
{Figure 4 of Mason is said to depict the use of photoresist pattern 24 as a
mask to transfer a pattern to underlying layers.}
[24] After the "hard mask" pattern has been formed, the photoresist pattern
24 and, optionally, the optical assist layer 16 can be removed (Mason
at 5, ¶ 7).
C. Su
[25] Su discloses methods of making semiconductor devices, specifically
flash memory cells and peripheral devices (Su at col. 1, ll. 15-18).
[26] Su discloses formation of a photoresist layer 13 over a polycide layer
comprising a polysilicon layer 10 and an overlying tungsten silicide
layer 11, which polycide layer will subsequently be used to create a
control gate in the flash memory cell (Su at col. 4, l. 53 - col. 5, l. 4;
Fig. 6, area 70).
D. Rejections over the Prior Art and Rebuttal
[27] The Examiner finds that Mason teaches the steps of method claims 12
and 58, the only independent claims on appeal, but for an optical
assist layer (i.e., imagable-material-supporting layer) comprising
either doped or undoped silicon instead of a layer "consisting
essentially of one of undoped silicon and conductively-doped silicon,"
as recited in claim 12, or "polysilicon," as recited in claim 58 (Answer
at 4 and 6).
9
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Next
Last modified: September 9, 2013