Appeal No. 95-2440
Application 07/705,726
b. growth by sputter epitaxy of a heavily doped second
layer, thinner than said first layer, of the same
semiconductor material and of a second conductivity type;
c. localized diffusion in selected areas of the
impurities present in the said second layer into the said
first layer by causing patterned light of appreciable
intensity to fall on the surface of the said second layer;
d. uniform removal by ion milling of the said second
layer, thus removing from nonselected areas essentially all of
the impurities associated with the said second layer of a
second conductivity type, while leaving these said impurities
distributed through the thickness of the said first layer in
the said selected areas;
e. thermal annealing of the grown crystal-layer increment
by using unpatterned incident light.
The references of record relied upon by the examiner are:
Potts 3,420,719 Jan. 7,
1969
Curran 4,717,681 Jan. 5,
1988
(Filed May 19, 1986)
G.K. Wehner, et al. (Wehner), “Substituting low-energy
(<30eV)ion bombardment for Elevated Temperature in Silicon
Epitaxy,” J. Appl. Phys. 64(12), (December 15, 1988), pp.
6754-60.
Stanley Wolf, et al. (Wolf), Silicon Processing for The VLSI
Era Vol. 1: Process Technology, (Lattice Press, Sunset Beach,
California, 1986), pp. 156-58, and 539-42.
The appeal claims stand rejected as follows:
(1) Claims 46 through 50, 52, 57 through 61, 63 and 72
through 92 under 35 U.S.C. § 112, first paragraph, as lacking
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