Appeal No. 96-1805
Application 08/200,432
Goesele et al. (Goesele) 4,883,215 Nov. 28, 1989
Hoshi et al. (Hoshi) 5,129,827 July 14, 1992
Wells et al. (Wells) 5,131,968 July 21, 1992
Black et al., (Black), “Silicon and Silicon Dioxide Thermal
Bonding For Silicon On-Insulator Applications,” J. Appl. Phys.,
63(8), April 15, 1988, pages 2773-2777.
Haisma et al. (Haisma), “Silicon-On-Insulator Wafer Bonding-Wafer
Thinning Technological Evaluations,” Japanese Journal of Applied
Physics, Vol. 28, No. 8, August 1989, pages 1426-1443.
The appellant’s admitted prior art as set forth on page 2, lines
17-21, page 8, line 4-page 9, line 17, and Figures 4A-4D.
THE REJECTIONS
Claims 1, 3 through 17, 20 and 21 stand rejected under 35
U.S.C. § 103 as being unpatentable over the admitted prior art in
view of Wells, Hoshi and Black, considered either together or
further in view of Goesele.2
Claims 9 and 17 through 19 stand rejected under 35 U.S.C. §
103 as being unpatentable over the references cited against claim
1 et al. taken further in view of Haisma.
2We note that claim 8, as it appears in the appendix to the
Brief, is dependent from claim 2, which has been canceled.
However, inspection of Amendment A (Paper No. 6), in which claim
8 first was presented, reveals that it properly depends from
claim 1. We also note that a rejection of claims 4 and 5 under
35 U.S.C. § 112, second paragraph, was overcome by an amendment
filed after the final rejection (Paper No. 13).
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