Ex parte MIYAZAWA et al. - Page 12

          Appeal No. 96-1805                                                          
          Application 08/200,432                                                      

          suggested to one of ordinary skill in the art that the pressure             
          be reduced before the start of sticking, as is required in claims           
          1 and 13.                                                                   
               Another of the requirements in these two claims is that the            
          space between the wafers be filled with a gas having a viscosity            
          less than air before the start of sticking.  We agree with the              
          examiner that one of ordinary skill in the art would have been              
          taught by Black that the bonding of silicon wafers can be                   
          enhanced by doing the process in a hydrogen atmosphere.  The                
          problem we find in the rejection is, however, a lack of                     
          suggestion to combine in a manner which would meet the terms of             
          the claim.  First of all, as we noted above, Hoshi teaches                  
          eliminating the problem of gas bubbles remaining between the                
          bonded wafers by holding the wafers in a warped condition and               
          then releasing them to spring into contact with each other, this            
          being done in an environment of reduced pressure.  However, as we           
          stated above, according to the record before us reduced pressure            

          is taught by Black as an alternative to the use of hydrogen gas.            
          This being the case, it is our view that Black would have taught            
          one of ordinary skill in the art to use either reduced pressure             
          or hydrogen gas, but not both together.  Second, even                       


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