Ex parte MIYAZAWA et al. - Page 9

          Appeal No. 96-1805                                                          
          Application 08/200,432                                                      

               Black is concerned with preventing voids between bonded                
          wafers which are caused by the presence of particulate or gas.              
          Black specifies that the wafers are made of silicon material.               
          The reference points out that particulate voids can be eliminated           
          by bonding the wafers in a dust-free chamber (page 2773, column             
          2), and that gas voids between the wafers can be eliminated if              
          the gas between the wafers during the bonding operation "is                 
          either capable of combining with the silicon (e.g. oxygen) or               
          diffusing out of the bubble void through the silicon" (page 2776,           
          column 2).  In addition to oxygen, the reference mentions                   
          hydrogen and helium as being appropriate gases (page 2774, column           
          1, lines 3 and 4).  Black also comments that some wafer pairs               
          mated in high vacuum (page 2774, columns 1 and 2).  In the                  
          conclusion section of the article, after stating that gas voids             
          can be eliminated by combining with the wafer or diffusing                  
          through it, it is said that "[m]ating the wafers under high                 
          vacuum was also effective" (page 2776, column 2, emphasis added),           
          which would seem to establish that the authors did not                      
          contemplate utilizing hydrogen gas plus vacuum conditions in the            
          bonding chamber.  This understanding is confirmed by the                    
          examiner, who states on page 11 of the Answer that "[t]he use of            


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