Appeal No. 1998-0129 Page 2
Application No. 08/438,062
BACKGROUND
The appellants’ invention relates to a thin film
capacitor including a BST film as a dielectric, on a gallium
arsenide substrate. An understanding of the invention can be
derived from a reading of exemplary claim 1, which is
reproduced as follows:
1. A high capacitance thin film capacitor device
comprising:
a gallium arsenide substrate;
a barrier layer formed on said substrate;
a stress reduction layer on said barrier layer; and
a capacitor on said stress reduction layer, said
capacitor comprising a first electrode, a second electrode,
and a barium strontium titanate dielectric material between
said electrodes.
The prior art references of record relied upon by the
examiner in rejecting the appealed claims are:
1(...continued)
whether claim 3 is rejected on new grounds . . .” In light of the examiner’s
withdrawal of the grounds of rejection of claim 3, there is no new ground of
rejection of claim 3, and claim 3 is no longer before us for decision on
appeal. In addition, as brought to our attention by both the examiner
(answer, page 2)and appellants (reply brief, pages 2 and 3), claim 4
inadvertently depends from itself, instead of from claim 1. We consider this a
formality that can be addressed subsequent to this appeal. For purposes of
this appeal, we shall consider claim 4 to depend from claim 1.
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