Appeal No. 1998-0077
Application No. 08/247,910
(Specification, page 7, line 20).
Independent claim 21 is reproduced as follows:
21. A method for fabricating a polysilicon resistor which
includes a resistor body portion and at least two contact
portions, said method comprising the steps of:
forming a polysilicon layer;
doping said polysilicon layer to obtain a first
resistivity;
forming an insulating layer over said polysilicon layer;
removing a portion of said insulating layer such that
said resistor body portion of said polysilicon layer remains
beneath said insulating layer but said contact portions are
exposed;
subsequent to said step of removing a portion of said
insulating layer, etching said polysilicon layer to form a
resistor which includes said resistor body and said at least
two contact portions abutting said resistor body;
performing a second doping step wherein said two contact
portions are doped without substantially affecting the doping
concentration of said resistor body;
subsequent to said step of forming an insulating layer,
forming a sidewall spacer along sidewalls of said resistor
body and said at least two contact portions, said sidewall
spacer also being formed along a sidewall of said insulating
layer formed on said contact portions;
subsequent to said second doping step, forming a silicide
region on said contact portions.
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