Appeal No. 1998-0077
Application No. 08/247,910
portion of said polysilicon layer remains beneath said
insulating layer but said contact portions are exposed;
subsequent to said step of removing a portion of said
insulating layer, etching said polysilicon layer to form a
resistor which includes said resistor body and said at least
two contact portions abutting said resistor body;" doping the
resistor contact portions a second time without affecting the
doping concentration of the resistor body; subsequent to the
step of forming an insulating layer, forming a sidewall spacer
along sidewalls of the resistor body resistor contact
portions, and insulating layer; and forming a silicide region
on said contact portions. (Emphasis added.)
Thus, Appellants' claim 21 requires etching the polysilicon
layer to form a resistor subsequent to the removal of a
portion of the insulating layer.
Upon a careful review of Ning, Hanagasaki, Winnerl et
al., and Brower, we fail to find that these references teach
or suggest the step of etching the polysilicon layer to form a
resistor subsequent to the step of removing a portion of the
insulating layer. We agree with the Examiner that Ning
8
Page: Previous 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Next
Last modified: November 3, 2007