Appeal No. 1998-0077
Application No. 08/247,910
without corresponding textual description, patterning and
etching of the insulating layer such that the layer covers
only the resistor body, exposing the contacts.
Hanagasaki teaches formation of silicide resistor
contacts at column 6, line 32 to column 7, line 3.
Hanagasaki, however, does not teach patterning and etching an
insulating layer followed by patterning and etching a
polysilicon layer to form a resistor having such contacts.
Winnerl et al. suggests the formation of sidewall spacers
prior to silicide contact formation, at column 3, line 65, to
column 4, line 5. Winnerl et al. teaches removing a portion
of an insulating layer (see Fig. 2 and column 2, line 67 to
column 3, line 5), but such removal does not expose the
resistor contact portions. Winnerl et al. subsequently
patterns and etches an underlying polysilicon layer (layer 14,
Fig. 3, column 3, lines 3-25); but the Winnerl et al.
reference lacks a teaching of subsequent doping of the
resistor contact portions.
Thus, we fail to find that the combination proposed by
the Examiner would have resulted in the claimed invention.
Further, Appellants' independent claim 22 contains limitations
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