Appeal No. 1998-0077
Application No. 08/247,910
teaches patterning the polycrystalline silicon layer followed
by patterning of the overlying insulating layer, in
contradistinction to the claimed invention. We agree with the
Examiner that Hanagasaki teaches the formation of silicide
resistor contacts; that Winnerl et al. suggests the formation
of sidewall spacers prior to silicide contact formation; and
that Ning, Hanagasaki, and Brower together teach doping the
resistor contacts. We fail to find, however, that any
reference teaches etching the polysilicon layer to form a
resistor after removing a portion of the insulating layer such
that the resistor body remains beneath the insulating layer
but the contact portions are exposed.
Ning teaches at pages 369 and 370 forming layers of
polysilicon and insulator, the polysilicon being doped n type
by ion implantation (Fig. 3A). Ning then teaches (in Fig. 3B)
patterning the polysilicon layer. It is noted that Fig. 3B
shows that the insulating layer has been patterned along the
same dimensions as the polysilicon layer, so as to overlie the
polysilicon layer. Next, Ning teaches (Fig. 3C) patterning
the polysilicon resistor region, the resistor contact region
being doped n+ by ion implantation. Ning Fig. 3C illustrates,
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